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Proceedings Paper

Low energy inductively coupled plasma etching of HgCdTe
Author(s): Xiaoning Hu; Zhenhua Ye; Ruijun Ding; Li He; Glenn Tan; Ligang Deng
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Paper Abstract

The high-density inductively coupled plasma etching technique was applied to HgCdTe, while using the RF-powered wafer electrode to provide low plasma energy. By using a CH4/H2/N2/Ar chemistry the HgCdTe etch profiles were studied as a function of mask selectivity, chamber pressure, gas ratio and ICP power. The etch rate was found to decrease as etch depth increasing. The LBIC and I-V measurements were employed to investigate the electrical damage of HgCdTe material caused by plasma bombardment.

Paper Details

Date Published: 14 October 2005
PDF: 6 pages
Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596408 (14 October 2005); doi: 10.1117/12.625143
Show Author Affiliations
Xiaoning Hu, Shanghai Institute of Technical Physics (China)
Zhenhua Ye, Shanghai Institute of Technical Physics (China)
Ruijun Ding, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)
Glenn Tan, Oxford Instrument Plasma Technology (Singapore)
Ligang Deng, Oxford Instrument Plasma Technology (United Kingdom)


Published in SPIE Proceedings Vol. 5964:
Detectors and Associated Signal Processing II
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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