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Proceedings Paper

Homogeneity of composition in evaporated Pb1-xGexTe thin films
Author(s): B. Li; S. Y. Zhang; D. Q. Liu; F. S. Zhang
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Paper Abstract

PbTe based semiconductors are well-known narrow gap IV-VI compounds, which are of interest due to potential application in the fabrication of photo-detectors in the mid- and far infrared spectral range. Among them, Pbl−xGexTe is known to have wider band gap than PbTe, which has been used to fabricate photo-detectors with shorter wavelength (λ<6.7 μm). However, the homogeneity of composition in evaporated Pbl−xGexTe thin films directly from bulk alloys has not been investigated. In the paper, we report the investigation that the homogeneity of composition on the surface was studied using energy-dispersive X-ray analysis (EDAX), and the compositional depth profiles was investigated using Auger electron spectroscopy (AES) in combination with argon ion sputtering. ASE depth profiling and characterization of details in the Ge concentration gradient is demonstrated.

Paper Details

Date Published: 17 October 2005
PDF: 5 pages
Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596410 (17 October 2005); doi: 10.1117/12.625042
Show Author Affiliations
B. Li, Shanghai Institute of Technical Physics, CAS (China)
S. Y. Zhang, Shanghai Institute of Technical Physics, CAS (China)
D. Q. Liu, Shanghai Institute of Technical Physics, CAS (China)
F. S. Zhang, Shanghai Institute of Technical Physics, CAS (China)


Published in SPIE Proceedings Vol. 5964:
Detectors and Associated Signal Processing II
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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