Share Email Print
cover

Proceedings Paper

MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures
Author(s): Sergey A. Dvoretsky; Vasiliy S. Varavin; Nikolay N. Mikhailov; Yuri G. Sidorov; Tamara I. Zakharyash; Vladimir V. Vasiliev; Victor N. Ovsyuk; Galina V. Chekanova; Mikhail S. Nikitin; Ivan Yu. Lartsev; Alexander L. Aseev
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Ultimate performance small-pitched infrared focal plane arrays (FPA) are of the great interest for development and production of state-of-the-art special and common use thermal imagers. Novel MBE-grown Hg1-xCdxTe/CdZnTe/GaAs heterostructures (MCT/CZT on GaAs HS) are considered perspective for implementation of sophisticated FPA concepts including multi-color and HOT (high operating temperature). Performance of MWIR and LWIR photoconductive (PC) and photovoltaic (PV) infrared detectors fabricated on the base of a. m. heterostructures are presented. The main feature of developed technology is formation of multi-layer device structure in single MBE growth run with precise control of thickness and alloy composition "x" across individual layers and hence throughout heterostructure. Flexible HS design results in half-finished products of PC and PV detectors with optimized parameters of absorber and perfect interfaces between absorber and blocking layers providing effective suppression of surface recombination and surface leakage currents. Giant peak responsivity RVco=10.5 μm, 500 K, 1200 Hz) over 6,0×105 V/W was reached on LWIR PC. Average values D* = 1.8×1011 cmHz1/2W-1 and NEDT = 9 mκ were measured on 4×288 PV FPA with λco = 11.2 μm at T=78 K just as 23 mK and 19 mκ on 320×256(240) PV FPA with λco = 5.5 and λco = 10.2 μm at T=78 K.

Paper Details

Date Published: 15 October 2005
PDF: 12 pages
Proc. SPIE 5964, Detectors and Associated Signal Processing II, 59640A (15 October 2005); doi: 10.1117/12.624912
Show Author Affiliations
Sergey A. Dvoretsky, Institute of Semiconductor Physics SB RAS (Russia)
Vasiliy S. Varavin, Institute of Semiconductor Physics SB RAS (Russia)
Nikolay N. Mikhailov, Institute of Semiconductor Physics SB RAS (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics SB RAS (Russia)
Tamara I. Zakharyash, Institute of Semiconductor Physics SB RAS (Russia)
Vladimir V. Vasiliev, Institute of Semiconductor Physics SB RAS (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics SB RAS (Russia)
Galina V. Chekanova, Federal State Unitary Enterprise ALPHA (Russia)
Mikhail S. Nikitin, Federal State Unitary Enterprise ALPHA (Russia)
Ivan Yu. Lartsev, Federal State Unitary Enterprise ALPHA (Russia)
Alexander L. Aseev, Institute of Semiconductor Physics SB RAS (Russia)


Published in SPIE Proceedings Vol. 5964:
Detectors and Associated Signal Processing II
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

© SPIE. Terms of Use
Back to Top