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Proceedings Paper

Mask tilt effects counteracted by wafer tilts in a Schwarzschild objective based EUV lithography setup
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Paper Abstract

The results of a numerical simulation of a conventional and a modified Schwarzschild objective are illustrated in relation with their use as imaging systems in an extreme ultraviolet lithography setup. It is demonstrated that the degradation of the resolution on the wafer due to the unavoidable tilt of the mask to the axis can fairly be vanished by a counter tilt of the wafer. In particular, it has been analysed the Schwarzschild objective setup under implementation at the ENEA Frascati Center within the context of the Italian FIRB project for EUV lithography.

Paper Details

Date Published: 15 October 2005
PDF: 12 pages
Proc. SPIE 5962, Optical Design and Engineering II, 59622Y (15 October 2005); doi: 10.1117/12.624845
Show Author Affiliations
S. Bollanti, ENEA-UTS Tecnologie Fisiche Avanzate (Italy)
P. Di Lazzaro, ENEA-UTS Tecnologie Fisiche Avanzate (Italy)
F. Flora, ENEA-UTS Tecnologie Fisiche Avanzate (Italy)
L. Mezi, ENEA-UTS Tecnologie Fisiche Avanzate (Italy)
D. Murra, ENEA-UTS Tecnologie Fisiche Avanzate (Italy)
A. Torre, ENEA-UTS Tecnologie Fisiche Avanzate (Italy)


Published in SPIE Proceedings Vol. 5962:
Optical Design and Engineering II
Laurent Mazuray; Rolf Wartmann, Editor(s)

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