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Proceedings Paper

Optical metrology of binary arrays of holes in semiconductor media using microspot spectroscopic ellipsometry
Author(s): Roman Antos; Ivan Ohlidal; Jan Mistrik; Tomuo Yamaguchi; Stefan Visnovsky; Shinji Yamaguchi; Masahiro Horie
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Paper Abstract

Spectroscopic ellipsometry (SE) with microscopic measurement spot is applied to extract geometrical parameters of a bi-periodic array of holes patterned on the top of an Si wafer, namely the holes' diameter and depth, while the period of the patterning is assumed same as the value intended by the manufacturer. The SE response of the structure is simulated by the rigorous coupled-wave analysis implemented as the Airy-like internal reflection series, whose detailed description for the case of 2D gratings is provided with a brief demonstration of its convergence properties. The result of the extraction by SE is compared with results obtained by scanning electron microscopy (SEM) with reasonable agreement. The difference between some of the SE, SEM, and nominal parameters are discussed and the possibility to increase the accuracy of SE-based metrology is suggested.

Paper Details

Date Published: 20 October 2005
PDF: 10 pages
Proc. SPIE 5965, Optical Fabrication, Testing, and Metrology II, 59652B (20 October 2005); doi: 10.1117/12.624837
Show Author Affiliations
Roman Antos, Shizuoka Univ. (Japan)
Ivan Ohlidal, Masaryk Univ. (Czech Republic)
Jan Mistrik, Shizuoka Univ. (Japan)
Tomuo Yamaguchi, Shizuoka Univ. (Japan)
Stefan Visnovsky, Charles Univ. (Czech Republic)
Shinji Yamaguchi, Dainippon Screen Manufacturing Co., Ltd. (Japan)
Masahiro Horie, Dainippon Screen Manufacturing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5965:
Optical Fabrication, Testing, and Metrology II
Angela Duparré; Roland Geyl; Lingli Wang, Editor(s)

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