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Proceedings Paper

Charge ordering temperatures of Bi1-xSrxMnO3 (0.45 ⩽ x ⩽ 0.8)
Author(s): B. H. Kim; J. S. Kim; M. S. Kim; C. J. Zhang; K. H. Kim; B. G. Kim; H. C. Kim; Y. W. Park
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Paper Abstract

We have investigated the charge ordering phenomenon from the temperature dependence of inverse susceptibility, resistivity, and thermoelectric power (TEP) for Bi1-xSrxMnO3 (BSMO) from 300 K to 700 K. At high temperatures, susceptibility follows Curie-Weiss law. The resistivity data indicate insulating behavior of BSMO. TEP (S(T)) value is negative and weakly temperature-dependent in the high temperature regime. The slope of TEP changes dramatically near the charge ordering temperature (ΤCO), indicating an increase of energy gap due to the charge ordering. In the vicinity of ΤCO, thermal hysteresis is observed in TEP data as well as in the resistivity data, which is consistent with the nature of the martensitic transition of the charge ordering phenomena. From this hysteretic behavior, we estimated ΤCO. As Sr concentration increases, ΤCO shifts to lower temperature from ΤCO ~ 490 K for x = 0.45 to ΤCO ~ 435 K for x = 0.8, and the thermal hysteretic behavior becomes less pronounced. The electrical transport properties have been discussed in terms of carrier localization due to charge ordering transition accompanied by the local lattice distortions.

Paper Details

Date Published: 10 September 2005
PDF: 7 pages
Proc. SPIE 5932, Strongly Correlated Electron Materials: Physics and Nanoengineering, 59322F (10 September 2005); doi: 10.1117/12.624690
Show Author Affiliations
B. H. Kim, Seoul National Univ. (South Korea)
J. S. Kim, Seoul National Univ. (South Korea)
M. S. Kim, Seoul National Univ. (South Korea)
C. J. Zhang, Seoul National Univ. (South Korea)
K. H. Kim, Pusan National Univ. (South Korea)
B. G. Kim, Pusan National Univ. (South Korea)
H. C. Kim, Korea Basic Science Institute (South Korea)
Y. W. Park, Seoul National Univ. (South Korea)


Published in SPIE Proceedings Vol. 5932:
Strongly Correlated Electron Materials: Physics and Nanoengineering
Ivan Bozovic; Davor Pavuna, Editor(s)

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