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Proceedings Paper

Emissivities of ceramic materials for high temperature processes
Author(s): Wolfgang Bauer; Alexander Moldenhauer; Alexander Platzer
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Paper Abstract

In technical heat treatment processes - e.g. the sintering process - the kiln as well as the heat treated material need to have a fairly homogeneous temperature distribution. In the kiln the heat is transferred from the furnace walls to the kiln aids and from the aids to the heat treated material. An example for such processes is the sintering of ceramics, where the heat is transferred from sintering aids to the sintering ceramic material. To guarantee an optimized heat treatment the details of the heat transfer need to be known. Many heat treatment procedures operate at such high temperatures that heat transfer is mainly dominated by radiation, but the emissivities of typical refractory materials of kiln and sintering aids in general are hardly known. Therefore, the spectral emissivities of some typical kiln materials and sintering aids were measured in the temperature range from 200 to 1200°C and in the spectral range from 0.8 to 25 μm at the radiation measurement device of the University Duisburg-Essen. These data were used to compute the temperature-dependent total emissivities. The paper describes the equipment for radiation measurement, the measured temperature-dependent spectral emissivities as well as the computed temperature-dependent total emissivities. It was found out, that different materials have different temperature-dependent spectral and total emissivities which may significantly influence the heat transfer in high temperature processes.

Paper Details

Date Published: 18 August 2005
PDF: 10 pages
Proc. SPIE 5880, Optical Diagnostics, 58800W (18 August 2005); doi: 10.1117/12.624512
Show Author Affiliations
Wolfgang Bauer, Universitaet Duisburg-Essen (Germany)
Alexander Moldenhauer, Universitaet Duisburg-Essen (Germany)
Alexander Platzer, Montanuniversitaet Leoben (Austria)


Published in SPIE Proceedings Vol. 5880:
Optical Diagnostics
Leonard M. Hanssen; Patrick V. Farrell, Editor(s)

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