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Proceedings Paper

Fabrication of 1x2 optical switch devices based on semiconductor-to-metallic phase transition characteristics of VO2 smart coatings
Author(s): M. Soltani; M. Chaker; E. Haddad; Roman Kruzelesky
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Paper Abstract

We have successfully fabricated two types of optical switch devices, namely, all-optical switch (VO2/quartz) and electro-optical switch (VO2/TiO2/ITO/glass) based on semiconductor-to-metallic phase transition characteristic of vanadium dioxide (VO2) smart coatings. The VO2 active layer, the TiO2 buffer layer, and the ITO transparent conductive electrode used in these devices, were achieved by reactive pulsed laser deposition. The optical switching of the fabricated devices was investigated at λ = 1.55 μm. The semiconductor (on) to metallic (off) phase transition was controlled by photoexcitation of VO2 in the case of the all-optical switch, and by an external electric-field between the ITO and the VO2 layer in the case of the electro-optical switch. The extinction ratio (on/off) is found to be much higher for the all-optical switch than for the electro-optical switch. For the all-optical switch, extinction ratio of about 22 dB and 12 dB are obtained in the transmission and reflection modes respectively. In the case of the electro-optical switch, the extinction ratio is about 12 dB in the transmission mode and 5 dB in the reflection mode.

Paper Details

Date Published: 23 May 2005
PDF: 4 pages
Proc. SPIE 5855, 17th International Conference on Optical Fibre Sensors, (23 May 2005); doi: 10.1117/12.624284
Show Author Affiliations
M. Soltani, INRS Energie, Materiaux et Telecommunications (Canada)
M. Chaker, INRS Energie, Materiaux et Telecommunications (Canada)
E. Haddad, MPB Communications Inc. (Canada)
Roman Kruzelesky, MPB Communications Inc. (Canada)


Published in SPIE Proceedings Vol. 5855:
17th International Conference on Optical Fibre Sensors
Marc Voet; Reinhardt Willsch; Wolfgang Ecke; Julian Jones; Brian Culshaw, Editor(s)

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