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Proceedings Paper

Improved light extraction efficiency in III-nitride photonic crystal light-emitting diodes
Author(s): Dong-Ho Kim; Jaehoon Kim; Heonsu Jeon; Yoon Soo Park; Jaehee Cho; Jin Seo Im; Cheolsoo Sone; Yongjo Park
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Paper Abstract

We observed a significant enhancement in light output from GaN-based light-emitting diodes (LEDs) in which two-dimensional photonic crystal (PC) patterns were integrated. We approached two types PC LEDs. One is top loaded PC LEDs. The PC patterns were generated on the top p-GaN layer. The other is bottom loaded PC LEDs. In this LEDs, PC patterns were integrated on the sapphire substrate. Two dimensional square-lattice air-hole array patterns, whose period was varied between 300 and 700nm, were generated by laser holography. Unlike the commonly utilized electron-beam lithographic technique, the holographic method can make patterns over a large area with high throughput. The resultant PC-LED devices with a pattern period of ~500nm had more than double the output power. The experimental observations are qualitatively consistent with three-dimensional finite-difference-time-domain simulation results.

Paper Details

Date Published: 2 September 2005
PDF: 7 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410M (2 September 2005); doi: 10.1117/12.623511
Show Author Affiliations
Dong-Ho Kim, Seoul National Univ. (South Korea)
Jaehoon Kim, Seoul National Univ. (South Korea)
Heonsu Jeon, Seoul National Univ. (South Korea)
Yoon Soo Park, Seoul National Univ. (South Korea)
Jaehee Cho, Samsung Advanced Institute of Technology (South Korea)
Jin Seo Im, Samsung Advanced Institute of Technology (South Korea)
Cheolsoo Sone, Samsung Advanced Institute of Technology (South Korea)
Yongjo Park, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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