Share Email Print
cover

Proceedings Paper

High-performance IR detectors at SCD present and future
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

For over 27 years, SCD has been manufacturing and developing a wide range of high performance infra-red detectors, designed to operate in either the mid-wave (MWIR) or the long-wave (LWIR) atmospheric windows. These detectors have been integrated successfully into many different types of system including missile seekers, Time Delay Integration scanning systems, Hand-Held cameras, Missile Warning Systems and many others. SCD's technology for the MWIR wavelength range is based on its well established 2-D arrays of InSb photodiodes. The arrays are flip-chip bonded to SCD's analogue or digital signal processors, all of which have been designed in-house. The 2-D Focal Plane Array (FPA) detectors have a format of 320×256 elements for a 30 μm pitch and 480×384 or 640×512 elements for a 20 μm pitch. Typical operating temperatures are around 77-85K. Five years ago SCD began to develop a new generation of MWIR detectors based on the epitaxial growth of Antimonide Based Compound Semiconductors (ABCS). This ABCS technology allows band-gap engineering of the detection material which enables higher operating temperatures and multi-spectral detection. This year SCD presented its first prototype FPA from this program, an InAlSb based detector operating at a temperature of 100 K. By the end of this year SCD will introduce the first prototype MWIR detector with a 640×512 element format and a pitch of 15 μm. For the LWIR wave-length range SCD manufactures both linear Hg1-xCdxTe (MCT) detectors with a line of 250 elements and Time Delay and Integration (TDI) detectors with formats of 288×4 and 480×6. Recently, SCD has demonstrated its first prototype un-cooled detector which is based on VOx technology and which has a format of 384×288 elements, a pitch of 25 μm and a typical NETD of 50mK at F/1. In this paper we describe the present technologies and products of SCD and the future evolution of our detectors for the MWIR and LWIR detection.

Paper Details

Date Published: 29 September 2005
PDF: 12 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59570S (29 September 2005); doi: 10.1117/12.623162
Show Author Affiliations
O. Nesher, SemiConductor Devices (Israel)
P. C. Klipstein, SemiConductor Devices (Israel)


Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

© SPIE. Terms of Use
Back to Top