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Proceedings Paper

Photoelectric, structural and mechanical properties of iso-valency replaced n-Hg0.79Cd0.21Te single crystals
Author(s): Kurban Kurbanov; Viktor Bogoboyashchyy; Ihor Izhnin
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Paper Abstract

Effect of iso-valency doping with S, Se or Zn dopants on Hg1-xCdxTe mechanical, structural and photoelectric properties is considered. It was revealed that iso-valency doping reduced the etch pit density and increased the microhardness in Hg1-xCdxTe single crystals. Such doping also improved the photoelectric properties, especially increased the excess carrier lifetime. Taking into account the value of equilibrium concentration of S, Se and Zn iso-valency dopants in Hg1-xCdxTe single crystals it was concluded that the most suitable iso-valency dopant is Se.

Paper Details

Date Published: 30 September 2005
PDF: 4 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59571E (30 September 2005); doi: 10.1117/12.622873
Show Author Affiliations
Kurban Kurbanov, Kremenchuk Institute of Economics and Law (Ukraine)
Viktor Bogoboyashchyy, Kremenchuk State Polytechnical Univ. (Ukraine)
Ihor Izhnin, R&D Institute for Materials SRC Carat (Ukraine)


Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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