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Proceedings Paper

Photosensitivity phenomena in multicomponent glasses
Author(s): K. Czachor; K. Jedrzejewski; R. Stępień
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Paper Abstract

Low cost, high bandwidth, narrowband and multifunctionality are main targets for new optical devices development. Planar optics is probably the best solution for future telecom long distance and access transmission networks but also for metrology sensing devices. Many different materials can be used for this purpose like PECVD silica, multicomponent glasses or even polymers. Bragg grating inscription in such material is another advantage to achieve narrowband spectral characteristic of device, which is essential in modern systems. The main purpose of presented work was the development in technology and measurement techniques of channels formed on the surface of the glass. Planar couplers and structures that are more complicated can also be made in the same technology in the future. Special multicomponent glasses SiO2-GeO2-B2O3-Na2O-SnO2 with up to 6 %mol of Sn were synthetized and thin rectangular polished plates were prepared. The UV 244 nm 100 mW Coherent argon ion frequency doubled laser was used in our experiments. Surface relief structures similar to the compaction-densification/expansion model of photosensitivity were developed on the glass surface. The optical microscope and alpha-step profiler were used for preliminary tests of photoinduced structures on the glass surface. The ability of the writing possibility in function of Sn content and different laser power levels were analyzed.

Paper Details

Date Published: 7 October 2005
PDF: 9 pages
Proc. SPIE 5948, Photonics Applications in Industry and Research IV, 594819 (7 October 2005); doi: 10.1117/12.622762
Show Author Affiliations
K. Czachor, Warsaw Univ. of Technology (Poland)
K. Jedrzejewski, Warsaw Univ. of Technology (Poland)
Institute of Electronic Materials Technology (Poland)
R. Stępień, Institute of Electronic Materials Technology (Poland)

Published in SPIE Proceedings Vol. 5948:
Photonics Applications in Industry and Research IV
Ryszard S. Romaniuk; Stefan Simrock; Vladimir M. Lutkovski, Editor(s)

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