Share Email Print
cover

Proceedings Paper

Optical continuum generation on a silicon chip
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Although the Raman effect is nearly two orders of magnitude stronger than the electronic Kerr nonlinearity in silicon, under pulsed operation regime where the pulse width is shorter than the phonon response time, Raman effect is suppressed and Kerr nonlinearity dominates. Continuum generation, made possible by the non-resonant Kerr nonlinearity, offers a technologically and economically appealing path to WDM communication at the inter-chip or intra-chip levels. We have studied this phenomenon experimentally and theoretically. Experimentally, a 2 fold spectral broadening is obtained by launching ~4ps optical pulses with 2.2GW/cm2 peak power into a conventional silicon waveguide. Theoretical calculations, that include the effect of two-photon-absorption, free carrier absorption and refractive index change indicate that up to >30 times spectral broadening is achievable in an optimized device. The broadening is due to self phase modulation and saturates due to two photon absorption. Additionally, we find that free carrier dynamics also contributes to the spectral broadening and cause the overall spectrum to be asymmetric with respect to the pump wavelength.

Paper Details

Date Published: 27 August 2005
PDF: 9 pages
Proc. SPIE 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II, 59310Q (27 August 2005); doi: 10.1117/12.622619
Show Author Affiliations
Bahram Jalali, University of California, Los Angeles (United States)
Ozdal Boyraz, University of California, Los Angeles (United States)
Prakash Koonath, University of California, Los Angeles (United States)
Varun Raghunathan, University of California, Los Angeles (United States)
Tejaswi Indukuri, University of California, Los Angeles (United States)
Dimitri Dimitropoulos, University of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 5931:
Nanoengineering: Fabrication, Properties, Optics, and Devices II
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

© SPIE. Terms of Use
Back to Top