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Proceedings Paper

Anomalous influence of electrons diffusion on absorption optical bistability realization
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Paper Abstract

An influence of electrons diffusion on the intensities of switching for absorption optical bistability based on high-intensity femtosecond laser pulse interaction with semiconductor is studied. The dependence of absorption coefficient on free electrons concentration and on induced electric field strength or its potential is considered. With the help of computer simulation an anomalous influence of electrons diffusion on intensities of switching under taking into account of free electrons mobility.

Paper Details

Date Published: 5 October 2005
PDF: 9 pages
Proc. SPIE 5949, Nonlinear Optics Applications, 59490H (5 October 2005); doi: 10.1117/12.622445
Show Author Affiliations
Vyacheslav A. Trofimov, Lomonosov Moscow State Univ. (Russia)
Maria M. Loginova, Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 5949:
Nonlinear Optics Applications
Miroslaw A. Karpierz; Allan Dawson Boardman; George I. Stegeman, Editor(s)

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