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Proceedings Paper

V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates
Author(s): Maxim Yakushev; Alexander Babenko; Danil Ikusov; Vladimir Kartashov; Nicolai Mikhailov; Irina Sabinina; Yuri Sidorov; Vladimir Vasiliev
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Paper Abstract

CdTe and HgCdTe layers were grown by MBE on GaAs(310) and Si(310) substrates. The dependences of microrelief height and macroscopic defects densities on the growth conditions of CdTe layer are plotted. CdTe buffer layers with the average height of surface relief of 2 nm are obtained. HgCdTe layers on GaAs(310) substrates with V-shaped defects density of 200-300 cm-2 were grown. When Si(310) substrates are used, the boundaries between antiphase domains are an additional reason for formation of V-shaped defects. It is shown, that the optimization of surface preparation processes and the growth conditions allows to grow one-domain films of CdTe buffer layers on Si(310) substrates and to lower the density of V-shaped defects.

Paper Details

Date Published: 29 September 2005
PDF: 8 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59570G (29 September 2005); doi: 10.1117/12.622424
Show Author Affiliations
Maxim Yakushev, Institute of Semiconductor Physics (Russia)
Alexander Babenko, Institute of Semiconductor Physics (Russia)
Danil Ikusov, Institute of Semiconductor Physics (Russia)
Vladimir Kartashov, Institute of Semiconductor Physics (Russia)
Nicolai Mikhailov, Institute of Semiconductor Physics (Russia)
Irina Sabinina, Institute of Semiconductor Physics (Russia)
Yuri Sidorov, Institute of Semiconductor Physics (Russia)
Vladimir Vasiliev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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