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Proceedings Paper

p+-InAsSbP/n-InAs photodiodes for IR optoelectronic sensors
Author(s): V. V. Tetyorkin; A. V. Sukach; S. V. Stariy; N. V. Zotova; S. A. Karandashev; B. A. Matveev; N. M. Stus
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Paper Abstract

The performance of p+-InAsSbP/n-InAs infrared (IR) photodiodes prepared by liquid phase epitaxy technique (LPE) is investigated. The current-voltage and capacitance-voltage characteristics, photoresponse and noise spectra are investigated in the temperature range 77-300 K. The trap-assisted current is calculated and compared with experimental data. It is found that at near-room temperatures and small reverse biases U ≤ 0.2 V experimental I-U characteristics are determined by diffusion and generation-recombination mechanisms. The trap-assisted tunnelling is shown to be dominant at higher reverse biases. The heterojunction photodiodes have superior photoresponse spectra in comparison with homojunction photodiodes and high threshold parameters.

Paper Details

Date Published: 29 September 2005
PDF: 8 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59570Z (29 September 2005); doi: 10.1117/12.622181
Show Author Affiliations
V. V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)
A. V. Sukach, Institute of Semiconductor Physics (Ukraine)
S. V. Stariy, Institute of Semiconductor Physics (Ukraine)
N. V. Zotova, A.F. Ioffe Physico-Technical Institute (Russia)
S. A. Karandashev, A.F. Ioffe Physico-Technical Institute (Russia)
B. A. Matveev, A.F. Ioffe Physico-Technical Institute (Russia)
N. M. Stus, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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