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Proceedings Paper

Researching photoelectric parameters of MCT MBE graded band-gap nanolayers with non-homogeneous composition and level of doping
Author(s): Alexander V. Voitsekhovskii; Andrey P. Kokhanenko; Michael F. Filatov; Nelly V. Fedorova
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Paper Abstract

Results of research electrophysical and photoelectric properties of HgCdTe photoconductive structures grown by method molecular beam epitaxy under influence of background radiation are submitted. Strong dependence of photoconductivity and carriers lifetime for a level of background radiation (for change aperture angle of diaphragm), which come to an agreement with results of calculation for the Auger mechanism of recombination are represented.

Paper Details

Date Published: 29 September 2005
PDF: 7 pages
Proc. SPIE 5957, Infrared Photoelectronics, 595719 (29 September 2005); doi: 10.1117/12.622173
Show Author Affiliations
Alexander V. Voitsekhovskii, Tomsk State Univ. (Russia)
Andrey P. Kokhanenko, Tomsk State Univ. (Russia)
Michael F. Filatov, Tomsk State Univ. (Russia)
Nelly V. Fedorova, Tomsk State Univ. (Russia)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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