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Proceedings Paper

The boron implantation in the graded-band MBE HgCdTe epilayer
Author(s): Alexander V. Voitsekhovskii; Denis V. Grigor'ev; Andrey P. Kokhanenko; Alexander G. Korotaev; Yuriy G. Sidorov; Vasiliy S. Varavin; Sergey A. Dvoretsky; Nicolay N. Mikhailov; Niyaz Kh. Talipov
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Paper Abstract

In the paper experimental results on boron implantation of the CdxHg1-xTe epilayers with various composition near surface of the material are discussed. The electron concentration in the surface layer after irradiation vs irradiation dose and ion energy are investigated for range of doses 1011 - 3•1015 cm-2 and energies of 20 - 150 keV. Also the results of the electrical active defects distribution measurement, carried out by differential Hall method, after boron implantation are represented. Consideration of the received data shows, that composition gradient influence mainly on the various dynamics of accumulation of electric active radiation defects. The electric active defects distribution analysis shows, that the other factors are negligible.

Paper Details

Date Published: 29 September 2005
PDF: 5 pages
Proc. SPIE 5957, Infrared Photoelectronics, 595718 (29 September 2005); doi: 10.1117/12.622158
Show Author Affiliations
Alexander V. Voitsekhovskii, Tomsk State Univ. (Russia)
Denis V. Grigor'ev, Tomsk State Univ. (Russia)
Andrey P. Kokhanenko, Tomsk State Univ. (Russia)
Alexander G. Korotaev, Tomsk State Univ. (Russia)
Yuriy G. Sidorov, Institute of Semiconductor Physics (Russia)
Vasiliy S. Varavin, Institute of Semiconductor Physics (Russia)
Sergey A. Dvoretsky, Institute of Semiconductor Physics (Russia)
Nicolay N. Mikhailov, Institute of Semiconductor Physics (Russia)
Niyaz Kh. Talipov, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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