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Proceedings Paper

Type conductivity conversion in MOCVD CdxHg1-xTe/GaAs hetero-structures under ion milling
Author(s): Ihor Izhnin; Victor Bogoboyashchyy; Anatoliy Kotkov; Alexsandr Moiseev; Natalya Grishnova
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Paper Abstract

P-n conductivity type conversion under ion milling in MOCVD p-CdxHg1-xTe/GaAs multi-layer hetero-structures is considered. It was revealed that CdTe (1 μm thick) passivation layer displayed the protective properties regarding ion milling action on active layer. P-n conversion at ion milling was observed in structures with 0.1-0.2 μm thick CdTe passivation layer; however, the converted depth (7 μm) was smaller than that in the similar homogeneous samples (15 μm). It was shown that the main properties of the converted p-n structures with thin CdTe layer were the same as in homogeneous samples. Ion milling resulted in forming of the typical n+- n - p+ structure with damaged n+-layer and main converted n-layer characterised by very low electron concentration. The relaxation of p-n structure electrical properties was also studied.

Paper Details

Date Published: 29 September 2005
PDF: 7 pages
Proc. SPIE 5957, Infrared Photoelectronics, 595716 (29 September 2005); doi: 10.1117/12.622113
Show Author Affiliations
Ihor Izhnin, R&D Institute for Materials SRC Carat (Ukraine)
Victor Bogoboyashchyy, Kremenchuk State Polytechnical Univ. (Ukraine)
Anatoliy Kotkov, Institute of Chemistry of High-Purity Substances (Russia)
Alexsandr Moiseev, Institute of Chemistry of High-Purity Substances (Russia)
Natalya Grishnova, Institute of Chemistry of High-Purity Substances (Russia)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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