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Proceedings Paper

Enhancement of light extraction in GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer
Author(s): Jong Kyu Kim; J.-Q. Xi; Hong Luo; Jaehee Cho; Cheolsoo Sone; Yongjo Park; E. Fred Schubert
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Paper Abstract

Enhancement of light extraction in GaN light-emitting diodes (LEDs) employing omnidirectional reflectors (ODRs) is presented. The ODR consists of GaN, ITO nanorod low-refractive-index layer, and an Ag layer. An array of ITO nanorods is deposited by oblique-angle deposition using e-beam evaporation. The refractive index of the ITO nanorods is 1.34 at 461 nm, significantly lower that that of dense ITO, which is n = 2.06 at 461 nm. It is experimentally shown that the GaN LED with GaN/ITO nanorods/Ag ODR show much better electrical properties and higher light-extraction efficiency than LEDs with Ag contact. This is attributed to enhanced reflectivity of the ODR by using an ITO low-refractive-index layer with high transparency, high conductivity, and low refractive index.

Paper Details

Date Published: 2 September 2005
PDF: 6 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59410K (2 September 2005); doi: 10.1117/12.621871
Show Author Affiliations
Jong Kyu Kim, Rensselaer Polytechnic Institute (United States)
J.-Q. Xi, Rensselaer Polytechnic Institute (United States)
Hong Luo, Rensselaer Polytechnic Institute (United States)
Jaehee Cho, Samsung Advanced Institute of Technology (South Korea)
Cheolsoo Sone, Samsung Advanced Institute of Technology (South Korea)
Yongjo Park, Samsung Advanced Institute of Technology (South Korea)
E. Fred Schubert, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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