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Proceedings Paper

Full characterization at 904 nm of large area Si p-n junction photodetectors based upon laser-induced diffusion
Author(s): Raid A. Ismail; Omar A. Abdulrazaq; Aseel A. Hadi
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Paper Abstract

In this paper, we report the experimental data of photoresponse namely; voltage responsivity and speed of response at λ = 904 nm of silicon photodiode formed by pulsed laser-induced diffusion technique. Experimental results demonstrated that the photodiode parameters strongly depend on the laser energy and substrate temperature. Maximum Responsivity obtained for p-n junctions photodetectors prepared by laser fluence of 9.17 J/cm2 for Al-doped Si and 10.03 J/cm2 for Sb-doped Si at substrate temperature (Ts) of 598 K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 1.6 for and 2.7 for for Al-doped Si and Sb-doped Si photodetectors respectively when Ts is raised from 300 K to 598 K.

Paper Details

Date Published:
PDF: 9 pages
Proc. SPIE 5957, Infrared Photoelectronics, 59571Y; doi: 10.1117/12.620889
Show Author Affiliations
Raid A. Ismail, Ministry of Science and Technology (Iraq)
Omar A. Abdulrazaq, NASSR State Co.–Ministry of Industry and Minerals (Iraq)
Aseel A. Hadi, Univ. of Technology (Iraq)

Published in SPIE Proceedings Vol. 5957:
Infrared Photoelectronics
Antoni Rogalski; Eustace L. Dereniak; Fiodor F. Sizov, Editor(s)

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