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Proceedings Paper

Wafer topography-aware optical proximity correction for better DOF margin and CD control
Author(s): Puneet Gupta; Andrew B. Kahng; Chul-Hong Park; Kambiz Samadi; Xu Xu
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Paper Abstract

Depth of focus is the major contributor to lithographic process margin. One of the major causes of focus variation is imperfect planarization of fabrication layers. Presently, OPC (Optical Proximity Correction) methods are oblivious to the predictable nature of focus variation arising from wafer topography. As a result, designers suffer from manufacturing yield loss, as well as loss of design quality through unnecessary guardbanding. In this work, we propose a novel flow and method to drive OPC with a topography map of the layout that is generated by CMP simulation. The wafer topography variations result in local defocus, which we explicitly model in our OPC insertion and verification flows. Our experimental validation uses 90nm foundry libraries and industry-strength OPC and scattering bar recipes. We find that the proposed topography-aware OPC can yield up to 90% reduction in edge placement errors at the cost of little increase in mask cost.

Paper Details

Date Published: 28 June 2005
PDF: 11 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.620379
Show Author Affiliations
Puneet Gupta, Blaze DFM, Inc. (United States)
Andrew B. Kahng, Blaze DFM, Inc. (United States)
Univ. of California/San Diego (United States)
Chul-Hong Park, Univ. of California/San Diego (United States)
Kambiz Samadi, Univ. of California/San Diego (United States)
Xu Xu, Univ. of California/San Diego (United States)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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