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Proceedings Paper

Combinatorial molecular beam epitaxy of La2-xSrxCuO4+δ
Author(s): G. Logvenov; I. Bozovic; I. Sveklo
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Paper Abstract

Using combinatorial molecular beam epitaxy (COMBE), we have deposited a one-dimensional (1D) combinatorial library of La2-xSrxCuO4 (LSCO) single-crystal thin films with different Sr content above the optimum doping level. A study of this LSCO library allows a detailed evaluation of the COMBE method. We have also developed and tested a custom-made multiple-probe transport measurement set-up that allowed us to measure the R(T) curves from more than 2,000 different samples (pixels in the 1D combinatorial library of LSCO) within one week. We also studied in detail the dependence of the crystal structure (specifically, the c-axis lattice constant) on the Sr content and on the type of epitaxial strain (compressive or tensile). For the films grown on LSAO substrates, we found that the c-axis lattice constant of LSCO films decreased as the Sr content was increased. This we attribute to the reduction in epitaxial strain that occurs because of Sr-doping-induced decrease of in-plane lattice constant of LSCO. Next, we have detected a small deviation of the beam profile from the linear dependence, noticeable for the deposition area larger that 1". If an array of substrates is used whereby some substrates are separated by more than 1" and if the stoichiometry is optimized at or close to the center of the array, in the films positioned at the outer edges of the array this effect causes slight off-stoichiometry and generation of secondary-phase defects.

Paper Details

Date Published: 30 August 2005
PDF: 9 pages
Proc. SPIE 5932, Strongly Correlated Electron Materials: Physics and Nanoengineering, 59320Z (30 August 2005); doi: 10.1117/12.620057
Show Author Affiliations
G. Logvenov, Brookhaven National Lab. (United States)
I. Bozovic, Brookhaven National Lab. (United States)
I. Sveklo, Research Center of Resource Savings (Belarus)

Published in SPIE Proceedings Vol. 5932:
Strongly Correlated Electron Materials: Physics and Nanoengineering
Ivan Bozovic; Davor Pavuna, Editor(s)

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