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Proceedings Paper

Broad band infrared spectroscopy of grooved silicon
Author(s): E. Yu. Krutkova; V. Yu. Timoshenko; L. A. Golovan; P. K. Kashkarov; E. V. Astrova; T. S. Perova; B. P. Gorshunov; A. A. Volkov
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Paper Abstract

Grooved silicon (gr-Si) structures with a period of few micrometers, which were formed by anisotropic etching of (110) Si wafers, have been investigated by means of broad band infrared (IR) and submillimeter transmission spectroscopy. In the spectral region of 50-1000 μm the results are well explained by an effective medium model, which predicts a strong birefringence with a difference between refractive indices for ordinary and extraordinary beams to be about 0.73-0.77. The IR transmission of gr-Si in the range from 1 to 30 μm is strongly influenced by light scattering. The experimental results measured in the region 1-5 μm can be understood in the terms of the geometric optics.

Paper Details

Date Published: 3 June 2005
PDF: 7 pages
Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); doi: 10.1117/12.619463
Show Author Affiliations
E. Yu. Krutkova, Lomonosov Moscow State Univ. (Russia)
V. Yu. Timoshenko, Lomonosov Moscow State Univ. (Russia)
L. A. Golovan, Lomonosov Moscow State Univ. (Russia)
P. K. Kashkarov, Lomonosov Moscow State Univ. (Russia)
E. V. Astrova, Ioffe Physical Technical Institute (Russia)
T. S. Perova, Trinity College Dublin (Ireland)
B. P. Gorshunov, Prokhorov Physical Institute (Russia)
A. A. Volkov, Prokhorov Physical Institute (Russia)

Published in SPIE Proceedings Vol. 5825:
Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks
John Gerard McInerney; Harold S. Gamble; Gerald Farrell; David M. Denieffe; Padraig Hughes; R. Alan Moore; Liam Barry, Editor(s)

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