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Proceedings Paper

Methods to enhance mode selectivity of higher-output vertical-cavity surface-emitting diode lasers
Author(s): Robert P. Sarzała; Włodzimierz Nakwaski
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Paper Abstract

Designing strategy to enhance mode selectivity of higher-output vertical-cavity surface-emitting diode lasers (VCSELs) is presented using the oxide-confined GaAs-based (GaIn)(NAs)/GaAs quantum-well VCSEL with two oxide apertures on both sides of its central active region as a typical example. A general strategy is to shift one aperture to the node position of the resonator standing wave where it is working as the electrical aperture only. Then diameters of both the apertures may be changed independently giving an additional degree of freedom for VCSEL designing. The comprehensive optical-electrical-thermal-gain self-consistent approach is used to simulate anticipated performance characteristics of the modified VCSEL. The single fundamental mode operation has been predicted in a large-size device with the 10-μm-diameter active region even for 80 K active-region temperature increase over the room ambient temperature. A similar radial waveguiding may be also produced in VCSELs with the aid of photonic crystals which have been found to create a very efficient discrimination mechanism for higher-order transverse modes. Therefore photonic-crystal confined VCSELs seem to be very promising structures in their future applications.

Paper Details

Date Published: 12 October 2005
PDF: 14 pages
Proc. SPIE 5958, Lasers and Applications, 59580D (12 October 2005); doi: 10.1117/12.619444
Show Author Affiliations
Robert P. Sarzała, Technical Univ. of Łódź (Poland)
Włodzimierz Nakwaski, Technical Univ. of Łódź (Poland)


Published in SPIE Proceedings Vol. 5958:
Lasers and Applications
Krzysztof M. Abramski; Antonio Lapucci; Edward F. Plinski, Editor(s)

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