Share Email Print
cover

Proceedings Paper

High total dose gamma radiation assessment of commercially available SiGe heterojunction bipolar transistors
Author(s): Marco Van Uffelen; Sam Geboers; Paul Leroux; Francis Berghmans
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Maintenance tasks of the future International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, some of which need to be radiation tolerant up to MGy dose levels. As a key element of opto-electronic transceivers, we therefore assessed the DC behavior of a commercial-off-the-shelf (COTS) SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to 15 MGy, with dose rates from 160 Gy/h to 27 kGy/h. Our in-situ measurements of the forward DC current gain (hfe) present a limited loss of about 30 % for a base current of 100 μA, with a dependence on the biasing conditions and a thermally activated recovery. These first ever reported results up to MGy levels allow us to design circuit-hardened driving electronics for both photonic transmitters and receivers, enabling high bandwidth communications applied in a fusion reactor environment.

Paper Details

Date Published: 30 August 2005
PDF: 14 pages
Proc. SPIE 5897, Photonics for Space Environments X, 58970C (30 August 2005); doi: 10.1117/12.619292
Show Author Affiliations
Marco Van Uffelen, SCK-CEN (Belgium)
Sam Geboers, KHK Geel (Belgium)
Paul Leroux, SCK-CEN (Belgium)
KHK Geel (Belgium)
Francis Berghmans, SCK-CEN (Belgium)
VUB, Univ. of Brussels (Belgium)


Published in SPIE Proceedings Vol. 5897:
Photonics for Space Environments X
Edward W. Taylor, Editor(s)

© SPIE. Terms of Use
Back to Top