Share Email Print
cover

Proceedings Paper

Effect of exposure intensity on the photochemical reaction speed of the lithography for thick film resists
Author(s): Yongkang Guo; Xionggui Tang; Jianhua Zhu; Jinglei Du
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Thick resist lithography is a rather complicated process, which involves quite a few nonlinear factors, so surface profile is largely affected by process conditions such as baking, exposure and development parameters. In this paper, the photochemical reaction mechanism of the thick diazonaphthoquinone(DNQ)-Novolak based photoresists is discussed in detail, and then the effect of exposure intensity on the photochemical reaction speed is investigated by using kinetic model. Numerical simulation and experimental results are presented and agree well with each other. Through comparison between the simulated and experimental results for thick DNQ-Novolak based resists, the photochemical reaction speed is obviously affected by the intensity magnitude during exposure, which will lead to the failure of exposure reciprocity law. This phenomenon is caused by the increase in temperature of resists, due to the highly exothermic reaction during exposure. These results are useful for the lithographic process optimization of thick film resists.

Paper Details

Date Published: 1 September 2005
PDF: 9 pages
Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58781G (1 September 2005); doi: 10.1117/12.619210
Show Author Affiliations
Yongkang Guo, Sichuan Univ. (China)
Xionggui Tang, Sichuan Univ. (China)
Jianhua Zhu, Sichuan Univ. (China)
Jinglei Du, Sichuan Univ. (China)


Published in SPIE Proceedings Vol. 5878:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II
Angela Duparre; Bhanwar Singh; Zu-Han Gu, Editor(s)

© SPIE. Terms of Use
Back to Top