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Proceedings Paper

High efficient photovoltaic power converter suitable for 920nm to 970nm InGaAs laser diodes
Author(s): James Liu; Ta-Chung Wu; Mort Cohen; Jan G. Werthen
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Paper Abstract

In this work, we report a highly efficient Photovoltaic Power Converter (PPC) suitable for 920 nm to 970 nm InGaAs MQW lasers for the first time. The epitaxial layers were grown by low pressure MOCVD on the semi-insulting GaAs substrate. The epi layers consist of a p-n junction of In0.12Ga0.88As and the window layer of p+ AlInGaAs. The device is made of seven or eight pie-segments of equal area series-connected by means of air-bridges. Under 500mW of 940nm laser illumination, the open-circuit voltage of the eight-segment InGaAs chip is 6.7V. The short-circuit current is 29.7mA. Its maximum delivered electrical power is 171.2mW, equal to a 34.2% overall power conversion efficiency. We also demonstrate the high temperature characteristic and stability of the device.

Paper Details

Date Published: 18 August 2005
PDF: 8 pages
Proc. SPIE 5871, Optical Technologies for Arming, Safing, Fuzing, and Firing, 58710D (18 August 2005); doi: 10.1117/12.618445
Show Author Affiliations
James Liu, JDS Uniphase Corp. (United States)
Ta-Chung Wu, JDS Uniphase Corp. (United States)
Mort Cohen, JDS Uniphase Corp. (United States)
Jan G. Werthen, JDS Uniphase Corp. (United States)

Published in SPIE Proceedings Vol. 5871:
Optical Technologies for Arming, Safing, Fuzing, and Firing
William J. Thomes; Fred M. Dickey, Editor(s)

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