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Proceedings Paper

Remote temperature mapping of high-power InGaN/GaN MQW flip-chip design LEDs
Author(s): V. K. Malyutenko; O. Yu. Malyutenko; A. V. Zinovchuk; A. L. Zakheim; D. A Zakheim; I. P. Smirnova; S. A. Gurevich
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Paper Abstract

We report on the study of heat 2D-distribution in InGaN LEDs with the stress made on local device overheating and temperature gradients inside the structure. The MQW InGaN/GaN/sapphire blue LEDs are designed as bottom emitting devices where light escapes the structure through the transparent GaN current spreading layer and sapphire substrate, whereas the LED structure with high-reflectivity Ni/Ag p-contact is bonded to the thermally conductive Si submount by a flip-chip method. The measurements are performed with an IR microscope operating in a time-resolved mode (3-5 um spectral range, <20 μm spatial and 10 μs temporal resolution), while scanning a heat emission map through a transparent sapphire substrate. We show how current crowding (which is difficult to avoid) causes a local hot region near the n-contact pads and affects the performance of the device at a high injection level.

Paper Details

Date Published: 14 September 2005
PDF: 7 pages
Proc. SPIE 5941, Fifth International Conference on Solid State Lighting, 59411K (14 September 2005); doi: 10.1117/12.618297
Show Author Affiliations
V. K. Malyutenko, Institute of Semiconductor Physics (Ukraine)
O. Yu. Malyutenko, Institute of Semiconductor Physics (Ukraine)
A. V. Zinovchuk, Institute of Semiconductor Physics (Ukraine)
A. L. Zakheim, Ioffe Physico-Technical Institute (Russia)
D. A Zakheim, Ioffe Physico-Technical Institute (Russia)
I. P. Smirnova, Ioffe Physico-Technical Institute (Russia)
S. A. Gurevich, Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5941:
Fifth International Conference on Solid State Lighting
Ian T. Ferguson; John C. Carrano; Tsunemasa Taguchi; Ian E. Ashdown, Editor(s)

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