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Proceedings Paper

Conduction characteristics in HgI2 devices
Author(s): W. Brock Alexander; Paul H. Holloway; Mark Davidson; Narada Bradman; John Sandoval; L. van den Berg; Colleen S. Spiegel
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Paper Abstract

The performance of semiconductor radiation detectors is a function of electronic properties which are in turn related to crystallographic quality. In this paper we used devices from <100> and <110> growth regions of several different HgI2 crystals grown by the PVD method. We measured I/V characteristics of HgI2 devices over the range of +/-1000V. Voltages were ramped at different rates and at a range of temperatures (-70oC to +20oC) and the dark current decreased with temperature. Several devices exhibited negative differential resistance indicating field enhanced trapping and/or the formation of high-field domains. These devices exhibited NDR at both positive and negative voltages and it was observed that the current peak reduced with repeated cycling of positive bias indicating the reduction of carriers with time. After applying a negative bias, the current peak on the positive bias increased dramatically indicating that the traps were repopulated. These experimental results were modeled with several analytical expressions of conduction processes, considering both semiconductor and insulator models, e.g., Frenkel-Poole, Schottky, and space-charge-limited emission, toward lending insight to mechanisms resulting in HgI2 detector conditioning.

Paper Details

Date Published: 16 September 2005
PDF: 9 pages
Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220R (16 September 2005); doi: 10.1117/12.617989
Show Author Affiliations
W. Brock Alexander, Constellation Technology Corp. (United States)
Paul H. Holloway, Univ. of Florida (United States)
Mark Davidson, Univ. of Florida (United States)
Narada Bradman, Univ. of Florida (United States)
John Sandoval, Constellation Technology Corp. (United States)
L. van den Berg, Constellation Technology Corp. (United States)
Colleen S. Spiegel, Constellation Technology Corp. (United States)

Published in SPIE Proceedings Vol. 5922:
Hard X-Ray and Gamma-Ray Detector Physics VII
Ralph B. James; Larry A. Franks; Arnold Burger, Editor(s)

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