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Proceedings Paper

Meta-stability effects in organic based transistors
Author(s): H. L. Gomes; P. Stallinga; M. Murgia; F. Biscarini; T. Muck; V. Wagner; E. Smits; D. M. de Leeuw
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Paper Abstract

The electrical stability of metal insulator semiconductor (MIS) capacitors and field effect transistor structures based in organic semiconductors were investigated. The device characteristics were studied using steady state measurements AC admittance measurements as well as techniques for addressing trap states. Temperature-dependent measurements show clear evidence that an electrical instability occurs above 200 K and is caused by an electronic trapping process. It is suggested that the trapping sites are created by a change in the organic conjugated chain, a process similar to a phase transition.

Paper Details

Date Published: 21 September 2005
PDF: 8 pages
Proc. SPIE 5940, Organic Field-Effect Transistors IV, 59400K (21 September 2005); doi: 10.1117/12.617862
Show Author Affiliations
H. L. Gomes, Univ. of Algarve (Portugal)
P. Stallinga, Univ. of Algarve (Portugal)
M. Murgia, Istituto per lo Studio dei Materiali Nanostrutturati/CNR (Italy)
F. Biscarini, Istituto per lo Studio dei Materiali Nanostrutturati/CNR (Italy)
T. Muck, International Univ. Bremen (Germany)
V. Wagner, International Univ. Bremen (Germany)
E. Smits, Philips Research (Netherlands)
D. M. de Leeuw, Philips Research (Netherlands)


Published in SPIE Proceedings Vol. 5940:
Organic Field-Effect Transistors IV
Zhenan Bao; David J. Gundlach, Editor(s)

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