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Proceedings Paper

Toward hot-hole THz lasers in homoepitaxial Si and GaAs with layered doping
Author(s): M. V. Dolguikh; A. V. Muravjov; R. E. Peale; R. A Soref; D. Bliss; C. Lynch; D. W Weyburne
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Paper Abstract

A recently proposed THz laser concept in homoepitaxially grown p-Ge with layered doping is reviewed. Prospects for realizing a similar design in Si or GaAs are considered.

Paper Details

Date Published: 27 August 2005
PDF: 9 pages
Proc. SPIE 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II, 593117 (27 August 2005); doi: 10.1117/12.617805
Show Author Affiliations
M. V. Dolguikh, Univ. of Central Florida (United States)
A. V. Muravjov, Univ. of Central Florida (United States)
R. E. Peale, Univ. of Central Florida (United States)
R. A Soref, Air Force Research Lab. (United States)
D. Bliss, Air Force Research Lab. (United States)
C. Lynch, Air Force Research Lab. (United States)
D. W Weyburne, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 5931:
Nanoengineering: Fabrication, Properties, Optics, and Devices II
Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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