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Proceedings Paper

New EUVL ML capping design for ML blank multiple reuses
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Paper Abstract

One of the biggest challenges in extreme ultraviolet lithography (EUVL) reflective mask blank fabrication is to make a reflective multilayer (ML) blank “defect-free.” SEMI-P38 standard for EUVL mask absorbing film stacks and ML requires ML defect density in the mask quality area to be less than 0.003 defect/cm2 at 30nm size for the 32 nm technology node. Due to the technical challenge in making such a defect-free ML EUVL mask blank, the EUVL ML blank yield is expected to be low. In order to reduce EUVL technology cost, it is desirable to reuse a qualified defect-free ML blank a few times. In this paper we will present a new EUVL ML blank design that allows one to reuse the ML blank after a patterned mask is no longer needed. A standard ML design will only allow one time use. The blank, in general, will not be reusable or reclaimable due to the top capping layer (possible a few layers underneath it) damage during the mask patterning, cleaning, and usage. The new ML blank design alters the standard capping layer structures such that the ML blanks can be reused up to a few times after the blank goes through each complete mask patterning and usage cycle. No additional ML re-deposition is needed for reusing the ML blanks. This new ML structure is particularly attractive since a blank, once it is qualified as a defect-free blank, can be reused a few times as a defect-free ML blank.

Paper Details

Date Published: 28 June 2005
PDF: 7 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617483
Show Author Affiliations
Pei-yang Yan, Intel Corp. (United States)
Eberhard Spiller, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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