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Proceedings Paper

Correction of long-range effects applied to the 65-nm node
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Paper Abstract

Specifications for CD control on current technology nodes have become very tight, especially for the gate level. Therefore all systematic errors during the patterning process should be corrected. For a long time, CD variations induced by any change in the local periodicity have been successfully addressed through model or/and rule based corrections. However, if long-range effects (stray light, etch, and mask writing process...) are often monitored, they are seldom taken into account in OPC flows. For the purpose of our study, a test mask has been designed to measure these latter effects separating the contributions of three different process steps (mask writing, exposure and etch). The resulting induced CD errors for several patterns are compared to the allowed error budget. Then, a methodology, usable in standard OPC flows, is proposed to calculate the required correction for any feature in any layout. The accuracy of the method will be demonstrated through experimental results.

Paper Details

Date Published: 28 June 2005
PDF: 9 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617433
Show Author Affiliations
Jerome Belledent, Philips Semiconductors (France)
James Word, Mentor Graphics Corp. (United States)
Yorick Trouiller, LETI-CEA (France)
Christophe Couderc, Philips Semiconductors (France)
Corinne Miramond, STMicroelectronics (France)
Olivier Toublan, Mentor Graphics Europe (France)
Jean-Damien Chapon, STMicroelectronics (France)
Stanislas Baron, STMicroelectronics (France)
Amandine Borjon, Philips Semiconductors (France)
Franck Foussadier, STMicroelectronics (France)
Christian Gardin, Freescale (France)
Kevin Lucas, Freescale (France)
Kyle Patterson, Freescale (France)
Yves Rody, Philips Semiconductors (France)
Frank Sundermann, STMicroelectronics (France)
Jean-Christophe Urbani, STMicroelectronics (France)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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