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Proceedings Paper

Determination of mask induced polarization effects on AltPSM mask structures
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Paper Abstract

In the process of discussion of possible mask-types for the 5x nm node (half-pitch) and below, the alternating phase-shifting mask (AltPSM) is a potential candidate to be screened. The current scenario suggests using 193 nm immersion lithography with NA values of up to 1.2 and above. New optical effects from oblique incident angles, mask-induced polarization of the transmitted light and birefringence from the substrate need to be taken into account when the optical performance of a mask is evaluated. This paper addresses mask induced polarization effects from dense lines-and-space structures on a real mask. Measurements of the polarization dependent diffraction efficiencies have been performed on AltPSM masks. Experimental results show good agreement with simulations. A comparison with Binary Masks is made.

Paper Details

Date Published: 28 June 2005
PDF: 8 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617432
Show Author Affiliations
Ingo Hollein, Advanced Mask Technology Ctr. GmbH and Co. KG (Germany)
Silvio Teuber, Advanced Mask Technology Ctr. GmbH and Co. KG (Germany)
Karsten Bubke, Advanced Mask Technology Ctr. GmbH and Co. KG (Germany)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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