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Proceedings Paper

Advanced photomask repair technology for 65nm lithography (3)
Author(s): Yasutoshi Itou; Yoshiyuki Tanaka; Yasuhiko Sugiyama; Ryoji Hagiwara; Haruo Takahashi; Osamu Takaoka; Tomokazu Kozakai; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Syuichi Kikuchi; Atsushi Uemoto; Anto Yasaka; Tatsuya Adachi; Naoki Nishida
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Paper Abstract

The 65nm photomasks have to meet tight specifications and improve the production yield due to high production cost. The 65nm optical lithography was thought to have two candidates, 157nm and 193nm. However, at the advent of immersion lithography, it is certain that 193nm lithography will be adopted. Therefore, we decided to develop the FIB machine, SIR7000FIB, proior to the EB machine. We optimized repair conditions of FIB system, SIR7000FIB, and evaluated this system. First, we demonstrated minute defect repair using about 15nm defect mask. Then, we confirmed that the repeatability of repair accuracy was below 7nm on a MoSi HT mask patterned 360nm and 260nm L&S patterns with opaque and clear defects by AFM. Consequently, we have achieved the target specifications of this system.

Paper Details

Date Published: 28 June 2005
PDF: 9 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617344
Show Author Affiliations
Yasutoshi Itou, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yoshiyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Ryoji Hagiwara, SII NanoTechnology Inc. (Japan)
Haruo Takahashi, SII NanoTechnology Inc. (Japan)
Osamu Takaoka, SII NanoTechnology Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Osamu Matsuda, SII NanoTechnology Inc. (Japan)
Katsumi Suzuki, SII NanoTechnology Inc. (Japan)
Mamoru Okabe, SII NanoTechnology Inc. (Japan)
Syuichi Kikuchi, SII NanoTechnology Inc. (Japan)
Atsushi Uemoto, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Tatsuya Adachi, SII NanoTechnology Inc. (Japan)
Naoki Nishida, HOYA Co. (Japan)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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