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Proceedings Paper

Defect quality management of 248nm alt-PSM in low-k1 condition
Author(s): Yoshikazu Nagamura; Satoshi Momose; Akira Imai; Kunihiro Hosono; Yasutaka Morikawa; Kouichirou Kojima; Hiroshi Mohri
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Paper Abstract

Application of long wavelength in lithography process has a great benefit for cost of ownerships (COO) of semiconductor manufacturers, however there’s a trade off of reducing process margins due to the low k1 condition, and all the efforts in order to obtain large process windows on wafer connect directly to chip production management. In this paper, the authors used 248 nm wavelength lithography with alternating phase shift mask (alt-PSM) to develop 90 nm line and space patterns in 90 nm half pitch on wafer, and thoroughly investigated printability of defects and defect-repairs on alt-PSM. Sensitivity analysis of photomask defect inspection tools was implemented and it showed that existing inspection tools satisfied requirements for detection of chrome (Cr) and quartz (Qz) defects, which had impacts on wafer. Printability of Cr and Qz defect repairs was evaluated focusing on through-defocus behavior, and conditions of defect repair were optimized to reduce variation of critical dimension (CD) on wafer. The repair conditions were also optimized by estimation of overlaps of process windows of defect-repaired area on that of non-defective references. Process windows were analyzed based on both wafer and aerial image measurements. In the last section of this paper, we discussed managing process windows of defect repairs by controls of biases and Qz heights as parameters on defect-repaired areas and suggested that total topography control around defective area was required in addition to the prospected parameters in order to maximize process margins.

Paper Details

Date Published: 28 June 2005
PDF: 11 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617337
Show Author Affiliations
Yoshikazu Nagamura, Renesas Technology Corp. (Japan)
Satoshi Momose, Renesas Technology Corp. (Japan)
Akira Imai, Renesas Technology Corp. (Japan)
Kunihiro Hosono, Renesas Technology Corp. (Japan)
Yasutaka Morikawa, Dai Nippon Printing Co., Ltd. (Japan)
Kouichirou Kojima, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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