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Proceedings Paper

Properties of pulsed laser deposited Bi2(m+n)Te3 thin films
Author(s): Martin Pavelka; Radek Zeipl; Miroslav Jelinek; Jarmila Walachova; Vaclav Studnicka
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Paper Abstract

The Bi2Te3 thin films with various thicknesses were prepared by laser ablation in vacuum using the KrF excimer laser. The energy density of laser was set at 5 J/cm2 (resp. at 2 J/cm2 in the second experiment). The substrate temperature was held at 410 °C. The influence of thickness on the Hall mobility and conductivity at room temperature is presented.

Paper Details

Date Published: 22 April 2005
PDF: 5 pages
Proc. SPIE 5830, 13th International School on Quantum Electronics: Laser Physics and Applications, (22 April 2005); doi: 10.1117/12.617336
Show Author Affiliations
Martin Pavelka, Institute of Physics (Czech Republic)
Radek Zeipl, Institute of Radio Engineering and Electronics (Czech Republic)
Miroslav Jelinek, Institute of Physics (Czech Republic)
Jarmila Walachova, Institute of Radio Engineering and Electronics (Czech Republic)
Vaclav Studnicka, Institute of Physics (Czech Republic)


Published in SPIE Proceedings Vol. 5830:
13th International School on Quantum Electronics: Laser Physics and Applications

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