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Proceedings Paper

Structural and optical properties of thin indium oxide films produced by pulsed laser deposition
Author(s): Todorka J. Stanimirova; Petar A. Atanasov; Anna O. Dikovska; Nadya E. Stankova; Svetlen H. Tonchev
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Paper Abstract

Thin indium oxide (In2O3) films were grown on (001) SiO2 by pulsed laser deposition techniqe at oxygen pressure from 1 to 20 Pa and substrate temperature between 100 and 500 °C from ceramic targets. The structural and optical properties of the films were investigated as a function of the growth conditions: oxygen pressure and substrate temperature. Polycrystalline In2)O3 films with prefer3ential (111) orientation were produced at oxygen pressure higher than 5 Pa and temperature higher than 100 °C. The Raman spectra confirm the cubic structure of the films. The films have transparency between 85% and 92% in the 400-2400 nm spectral range. The lowest optical waveguide loss measured is 9 dB/cm for the film grown at the optimum conditions: P(O2) = 10 Pa and Ts = 300 °C.

Paper Details

Date Published: 22 April 2005
PDF: 5 pages
Proc. SPIE 5830, 13th International School on Quantum Electronics: Laser Physics and Applications, (22 April 2005); doi: 10.1117/12.617319
Show Author Affiliations
Todorka J. Stanimirova, Institute of Electronics (Bulgaria)
Petar A. Atanasov, Institute of Electronics (Bulgaria)
Anna O. Dikovska, Institute of Electronics (Bulgaria)
Nadya E. Stankova, Institute of Electronics (Bulgaria)
Svetlen H. Tonchev, Institute of Solid State Physics (Bulgaria)

Published in SPIE Proceedings Vol. 5830:
13th International School on Quantum Electronics: Laser Physics and Applications
Peter A. Atanasov; Sanka V. Gateva; Lachezar A. Avramov; Alexander A. Serafetinides, Editor(s)

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