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Proceedings Paper

Development of positive-tone chemically amplified resist for LEEPL mask making
Author(s): Yoshiyuki Negishi; Kazumasa Takeshi; Takashi Yoshii; Keishi Tanaka; Yasuhiro Okumoto
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Paper Abstract

We have developed PCARs for LEEPL mask making that has high resolution, good CD uniformity and process stability. The proper choice of resists and the process optimization enabled to form 60nm hole patterns and achieved the local CDU<4.0nm at 80nm hole patterns using the current 50 keV VSB exposure system. The results of the examination about PEB temperature and CD revealed that the CD of small hole patterns was controlled by the quencher diffusion rather than the generated acid diffusion. Defocus issue was also investigated and the sensitivity control of a resist was effectively method against CD error. These results in this report clearly indicate the strategy of the resist development for resolve less than 100nm feature size using EB exposure system.

Paper Details

Date Published: 28 June 2005
PDF: 8 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617283
Show Author Affiliations
Yoshiyuki Negishi, Toppan Printing Co., Ltd. (Japan)
Kazumasa Takeshi, Toppan Printing Co., Ltd. (Japan)
Takashi Yoshii, Toppan Printing Co., Ltd. (Japan)
Keishi Tanaka, Toppan Printing Co., Ltd. (Japan)
Yasuhiro Okumoto, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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