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Proceedings Paper

Evaluation of defect repair of EUV mask absorber layer
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Paper Abstract

Nano-machining repair technique is relatively new technology for photomask repairing. The advantages of this technique are low substrate damage, precise edge placement accuracy and improved Z height accuracy comparison with Laser zapper or FIB GAE repair techniques. In this work, we have evaluated nano-machining technique capability for EUV mask repair. To get good wafer print results, additional side etch(X bias) and depth etch (Z bias) were needed. Defect repaired region was evaluated using CD-SEM, AFM and wafer print test. Good repair profile and good wafer print results were successfully obtained.

Paper Details

Date Published: 28 June 2005
PDF: 8 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617273
Show Author Affiliations
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Tsuyoshi Amano, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Fumiaki Kumasaka, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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