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Proceedings Paper

Investigation of defect repair methods for EUVL mask blanks through aerial-image simulations
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Paper Abstract

EUV lithography has become the leading candidate for pattern replication at the 32-nm technology node, but several important issues remain unresolved. In particular, the availability of defect-free masks is a critical concern. An intensive investigation of defect repair methods for EUVL mask blanks is required because the mitigation of defects has turned out to be much more difficult than anticipated. So, we investigated the effectiveness of several defect repair methods through accurate simulations employing the FDTD method. We calculated aerial images from masks with structural changes due to repair and compared them with those of a perfect mask. All the methods were found to suppress the degradation in light intensity caused by defects. At the same time, each repair method has some limitations and factors that require special attention. Thus, it is important to choose the most suitable repair method for a given defect.

Paper Details

Date Published: 28 June 2005
PDF: 11 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617268
Show Author Affiliations
Takeo Hashimoto, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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