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Proceedings Paper

Evaluations of optical performance for micro-trench on quartz etch in ArF lithography
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Paper Abstract

As promising technologies for ArF optical lithography, CLM(Chrome-Less Mask) and alternating phase shift mask(PSM) technologies among RETs(Resolution Enhancement Techniques) for low k1 have been researched worldwide for a couple of decades. Quartz dry etching has become more critical to manufacture the mask with those technologies in the ArF lithography. Alternating PSM and CLM require the formation of 180-degree phase difference by quartz dry etch. There are many error factors, which can influence CD uniformities on mask and wafers, in dry etch step such as micro-trench, depth uniformity, sidewall angle, and morphology. Furthermore, quartz depth is hard to control because there is no stopping layer for quartz etch. Micro-trench, one of the important factors on quartz etch, can drop light intensity on wafer. Therefore, micro-trench can deteriorate the RET. We investigated characteristics of micro-trench during quartz dry etch process and the influences on resolution, which can be improved by dry etch parameters.

Paper Details

Date Published: 28 June 2005
PDF: 9 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617227
Show Author Affiliations
Won-Suk Ahn, Samsung Electronics Co. (South Korea)
Hyuk-Joo Kwon, Samsung Electronics Co. (South Korea)
Seong-Yong Moon, Samsung Electronics Co. (South Korea)
Seong-Woon Choi, Samsung Electronics Co. (South Korea)
Woo-Sung Han, Samsung Electronics Co. (South Korea)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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