Share Email Print
cover

Proceedings Paper

Simulation based OPC for contact pattern using 193 nm lithography
Author(s): Martin Keck; Christof Bodendorf; Jorg Thiele; Alberto Lopez Gomez; Ying-Chung Tseng; Teng-Yen Huang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

For state of the art technologies, rule based optical proximity correction (OPC) together with conventional illumination is commonly used for contact layers, because it is simple to handle and processing times are short. However, as geometries are getting smaller it becomes more difficult to accurately control critical dimension (CD) variations influenced by nearby pattern. This applies in particular for irregularly arranged contact holes. Here simulation based OPC is more effective. We present a procedure for application of simulation based OPC for a 193 nm lithography contact hole layer with rectangular contact holes of different sizes in different proximities, using attenuated phase shift masks. In order to further improve the accuracy of the simulation based OPC process, characteristics of the mask, like mask corner rounding are incorporated in the OPC process. We build an OPC model, use it for OPC processing of DRAM design data and investigate the process window of the printing contacts. The results show an overlapping process window for length and width of isolated and dense small contact holes of different length and width, which is sufficient for volume production.

Paper Details

Date Published: 28 June 2005
PDF: 9 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617215
Show Author Affiliations
Martin Keck, Infineon Technologies AG (Germany)
Christof Bodendorf, Infineon Technologies AG (Germany)
Jorg Thiele, Infineon Technologies AG (Germany)
Alberto Lopez Gomez, Infineon Technologies SC300 GmbH & Co. OHG (Germany)
Ying-Chung Tseng, Infineon Technologies SC300 GmbH & Co. OHG (Germany)
Teng-Yen Huang, Infineon Technologies SC300 GmbH & Co. OHG (Germany)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

© SPIE. Terms of Use
Back to Top