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Proceedings Paper

Mask enhancement factor for 2D local CD error
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Paper Abstract

With ever decreasing feature sizes, the control of mask CD errors is becoming increasingly critical in order to realize a good lithographic performance. In our previous study, mask CD errors were classified on the basis of spatial frequency into the following three categories: local CD error, global CD error, and line edge roughness (LER). If the period of a mask CD error exceeds the optical proximity effect (OPE) range, the mask CD error is classified as a global CD error. If the period is almost equal to the OPE range, the mask CD error is classified as a local CD error. As compared with the OPE range, the LER has very small spatial frequency. Introducing the concept of mask enhancement factor (MEF) for local and global CD errors, we examined the ratio of local MEF to global MEF for 1-dimensional dense and isolated line patterns. In this paper, we build on our previous study, dealing with 2-dimensional rectangular patterns. In addition, we introduce the “local MEF matrix,” which reflects the characteristics of a pattern layout and aids the estimation of local CD errors. Furthermore, we discuss the required mask specifications of 2D patterns for low-k1 lithography.

Paper Details

Date Published: 28 June 2005
PDF: 8 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617209
Show Author Affiliations
Yukiyasu Arisawa, Toshiba Corp. (Japan)
Shoji Mimotogi, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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