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Proceedings Paper

Simulation of quartz phase etch affect on performance of ArF chrome-less hard shifter for 65-nm technology
Author(s): K. T. Park; Martin Sczyrba; Karsten Bubke; Rainer Pforr
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Paper Abstract

The Cr-less Phase Shift Mask (CLPSM) has been considered as one of the most practical resolution enhancement techniques (RET) solution providing low Mask Error Enhancement Factor (MEEF) for low k1 geometries for memory and logic semiconductor devices. There are several papers that show the advantages of the CLPSM compared to the other types of RET. Also the required design changes have been widely studied. Manufacturing of CLPSM requires quartz etching additionally to the COG mask process. Contrary to CLPSM, the required characteristics of the quartz etching process for altPSM are well specified. However, the required quality of the etching process for the CLPSM has not been sufficiently evaluated yet. In this paper, the impact of imperfections of the mask manufacturing process, like the effect of quartz sidewall profile, etch depth deviation and quartz trenching during quartz dry etching on mask imaging performance is investigated. Simulations were performed using Solid-CTM to investigate these effects for both mesa and trench type CLPSM for different pitches. A CLPSM mask was manufactured at AMTC to confirm the validity of the simulation through comparing the contrast deviation on various mesa and trench sizes. AIMS measurements have been performed for this purpose.

Paper Details

Date Published: 28 June 2005
PDF: 9 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617205
Show Author Affiliations
K. T. Park, Advanced Mask Technology Ctr. GmbH and Co. KG (Germany)
Martin Sczyrba, Advanced Mask Technology Ctr. GmbH and Co. KG (Germany)
Karsten Bubke, Advanced Mask Technology Ctr. GmbH and Co. KG (Germany)
Rainer Pforr, Infineon Technology GmbH and Co. KG (Germany)


Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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