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Proceedings Paper

Low K1 post printing using phase shifting mask
Author(s): Yung-Tin Chen; M. T. Lee; C. P. Chen; Y. Y. Huang; Timothy Wu; B. C. Ho
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Paper Abstract

As K1 approaching close to 0.3, it will require combinations of all the possible resolution enhancement techniques to achieve acceptable process window. In this study, we have explored the printability of 0.11μm half pitch with 0.7NA KrF lithography. We have designed several phase shifting masks to test the feasibility of printing 0.11μm half pitch line/space and dense post structures. Line and space patterns can be printed with attenuating phase shifting mask with sufficient process window. Post printing is more challenging due to its 2D optical interference effect. Chrome-less phase shifting mask is used for post printing due to its higher contrast. We have optimized mask bias and resist process in order to gain an acceptable process window. Negative KrF resist was also explored for its post printing capability. Our current study shows that the chrome-less phase shifting mask technology is capable of pushing K1 factor close to 0.3 for post printing.

Paper Details

Date Published: 28 June 2005
PDF: 8 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617202
Show Author Affiliations
Yung-Tin Chen, Matrix Semiconductor (United States)
M. T. Lee, Taiwan Semiconductor Manufacturing Co. (Taiwan)
C. P. Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Y. Y. Huang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Timothy Wu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
B. C. Ho, Taiwan Semiconductor Manufacturing Co. (Taiwan)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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