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Proceedings Paper

Lithography process related OPC development and verification demonstration on a sub-90nm poly layer
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Paper Abstract

Using a commercialized product Calibre OPC platform, optical and process models were built that accurately predict wafer-level phenomena for a sub-90nm poly process. The model fidelity relative to nominal wafer data demonstrates excellent result, with EPE errors in the range of ±2nm for pitch features and ±7 for line-end features. Furthermore, these models accurately predict defocus and off-dose wafer data. Overlaying SEM images with model-predicted print images for critical structures shows that the models are stable and accurate, even in areas especially prone to pinching or bridging. In addition, process window ORC is shown to identify potential failure points within some representative designs, allowing the mask preparation shop to easily identify these areas within the fractured data. And finally, the data and images of mask hotspots will be shown and compared down to wafer level.

Paper Details

Date Published: 28 June 2005
PDF: 8 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617194
Show Author Affiliations
Chi-Yuan Hung, Semiconductor Manufacturing International Corp. (China)
Qingwei Liu, Semiconductor Manufacturing International Corp. (China)
Liguo Zhang, Mentor Graphics Corp. (China)
Shumay Shang, Mentor Graphics Corp. (United States)
Andrew Jost, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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