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Proceedings Paper

Reticle SEM specifications required for lithography simulation
Author(s): Mitsuyo Kariya; Eiji Yamanaka; Satoshi Tanaka; Takahiro Ikeda; Shinji Yamaguchi; Masamitsu Itoh; Hideaki Kobayashi; Tsukasa Kawashima; Shogo Narukawa
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Paper Abstract

We investigated the specifications of scanning electron microscope required for the lithography simulation based on the edge data extracted from an actual reticle pattern in the assurance of reticle pattern in which two-dimensional optical proximity correction is applied. Impacts of field of view, positioning error and image distortion on a lithography simulation were studied experimentally. For the reticle pattern assurance in hp90, the field of view of larger than 16 μm squares, the positioning error within +/- 1 μm and the magnification error of less than 0.3% are needed. Under these conditions, wafer image can be predicted with sufficient accuracy by the simulation.

Paper Details

Date Published: 28 June 2005
PDF: 6 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617130
Show Author Affiliations
Mitsuyo Kariya, Toshiba Corp. (Japan)
Eiji Yamanaka, Toshiba Corp. (Japan)
Satoshi Tanaka, Toshiba Corp. (Japan)
Takahiro Ikeda, Toshiba Corp. (Japan)
Shinji Yamaguchi, Toshiba Corp. (Japan)
Masamitsu Itoh, Toshiba Corp. (Japan)
Hideaki Kobayashi, Dai Nippon Printing Co., Ltd. (Japan)
Tsukasa Kawashima, Dai Nippon Printing Co., Ltd. (Japan)
Shogo Narukawa, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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