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Proceedings Paper

Process monitoring system for instant defect detection and analysis in 65 nm node photomask fabrications
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Paper Abstract

Defect is a killing factor in photomask fabrications. For 65nm node photomask fabrication, even smaller than 1 um particle can cause hard-to-repair defect. And it is not easy to find the defect source and solve it. For this reason, the process monitoring system that shows us current defect trend rapidly and effectively is highly required. At the same time, this system can be used for verifying the process stability and detecting unusual signals in process.

Paper Details

Date Published: 28 June 2005
PDF: 6 pages
Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617126
Show Author Affiliations
Young-Seok Cho, Samsung Electronics (South Korea)
Jin-Hyung Park, Samsung Electronics (South Korea)
Won-Il Cho, Samsung Electronics (South Korea)
Jin-Hong Park, Samsung Electronics (South Korea)
Yong-Hyun Kim, Samsung Electronics (South Korea)
Seong-Woon Choi, Samsung Electronics (South Korea)
Woo-Sung Han, Samsung Electronics (South Korea)

Published in SPIE Proceedings Vol. 5853:
Photomask and Next-Generation Lithography Mask Technology XII
Masanori Komuro, Editor(s)

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